| PART |
Description |
Maker |
| AS27C256-90ECA AS27C256-15ECA AS27C256-30ECA AS27C |
256K UVEPROM UV Erasable Programmable Read-Only Memory
256K UVEPROM UV Erasable Programmable Read-Only Memory
|
Austin Semiconductor
|
| 27256 |
256K (32k x 8) Bit NMOS UV Erasable PROM
|
General Semiconductor
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| ISL6142 ISL6142CB ISL6152 ISL6152CB ISL6152IB |
Hot Plug Controller, Negative Voltage, -20V to -80V, Prog Inrush Current, IntelliTripCurrent Regulation, UV/OV Protection, Prog Time Out, Load current monitor, Active high PWRGD
Hot Plug Controller, Negative Voltage, -20V to -80V, Prog Inrush Current, IntelliTrip Current Regulation, UV/OV Protection, Prog Time Out, Load current monitor, Active low PWRGD-bar
Negative Voltage Hot Plug Controller
|
INTERSIL[Intersil Corporation]
|
| IS25C256 IS25C128 |
(IS25C128 / IS25C256) 128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| EPM5192ALC84-15 EPM5192AQC100-15 EPM5192AQI100-15 |
Eval Board for ISL8723 Power Sequencing Controllers
ASIC
Eval Board for ISL8106 Wide VIN, 7V to 25V, Single-Phase PWM Controller with Integrated MOSFET Drivers UV-Erasable/OTP复杂可编程逻辑器件
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
|
ON Semiconductor
|
| LC867120 |
8-Bit Single Chip Microcontroller with the UVEPROM
|
Sanyo Electric Co.,Ltd.
|
| EPM5128LI-2 EPM5128LC-2 EPM5128LC-1 EPM5128AJC-15 |
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
|
Powerex, Inc.
|
| XC7236-25WC44C XC7236-25WC44I XC7236A-25WC44M XC72 |
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
|
CTS, Corp.
|
